bas170ws-v document number 85653 rev. 1.7, 05-aug-10 vishay semiconductors www.vishay.com 1 20145 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal schottky diode features ? schottky diode for high-speed switching ? circuit protection ? voltage clamping ? high-level detecting and mixing ? aec-q101 qualified ? compliant to rohs directive 2002/95/ ec and in accordance to weee 2002/96/ec mechanical data case: sod-323 weight: approx. 4.3 mg packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified note: 1) valid provided that electrodes ar e kept at ambient temperature. thermal characteristics t amb = 25 c, unless otherwise specified note: 1) valid provided that electrodes ar e kept at ambient temperature part ordering code type marking remarks bas170ws-v bas170ws-v-gs18 or bas170ws-v-gs08 73 tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm 70 v forward continuous current i f 70 ma surge forward current t p < 1 s i fsm 600 ma power dissipation 1) p tot 200 mw parameter test condition symbol value unit thermal resistance junction to ambient air 1) r thja 650 k/w junction temperature t j 125 c operating temperature range t amb - 65 to + 125 c storage temperature range t stg - 65 to + 150 c
www.vishay.com 2 document number 85653 rev. 1.7, 05-aug-10 bas170ws-v vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified note: 1) pulse test; t p 300 s package dimensions in millimeters (inches) : sod-323 parameter test condition symbol min ty p. max unit reverse breakdown voltage i r = 10 a (pulsed) v (br) 70 v leakage current v r = 50 v i r 0.1 a v r = 70 v i r 10 a forward voltage i f = 1 ma v f 375 410 mv i f = 10 ma v f 705 750 mv forward voltage 1) i f = 15 ma v f 880 1000 mv diode capacitance v r = 0 v, f = 1 mhz c d 1.5 2 pf differential forward resistance i e = 5 ma, f = 10 khz r f 34 foot print recommendation: rev. 5 - date: 23.sept.2009 17443 document no.:s8-v-3910.02-001 (4) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) 1.6 (0.063) 0.10 (0.004) cathode bar 0.20 (0.008) 0.40 (0.016) 2.50 (0.098) 1.1 (0.043) 1.5 (0.059) 2.85 (0.112) 1.60 (0.063) 1.95 (0.077) 0.15 (0.006) 0.1 (0.004) max. 1.15 (0.045) 0.8 (0.031) created - date: 24.august.2004 0.40 (0.016) 0.25 (0.010) 0.2 (0.008) 0 to 8
www.vishay.com for technical questions , contact: emi-filter@vishay.com document number: 84018 24 rev. 1.3, 12-jan-07 sod323 vishay semiconductors package dimensions in millimeters (inches) created - date: 24. a u g u st. 2004 re v . 04 - date: 23. sep .2009 doc u ment no.: s 8 - v -3910.02-001 (4) 17443 0.1 (0.004) max. 1.95 (0.077) 1.60 (0.063) 2. 8 5 (0.112) 1.5 (0.059) 1.1 (0.043) mo u nting pad layo u t 2.50 (0.09 8 ) 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) 0.40 (0.016) 0.20 (0.00 8 ) cathode b ar 0.10 (0.004) 0.15 (0.006) 1.15 (0.045) 0. 8 (0.031) 0.40 (0.016) 0.25 (0.010) 0.2 (0.00 8 ) 0 - 8
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